EUV Litho, Inc.

Researchers at 2011 EUVL Workshop offer ways to further improve EUV Sources at 13.5 nm and extend EUVL to 6.x nm

The 2011 International Workshop on EUVL was held from June 13-17, 2011 in Maui, HI. Participants representing universities, national labs, tool suppliers and chip manufacturers discussed ways to address current technical challenges for inserting EUVL into high-volume manufacturing (HVM). Discussions focused on making EUV sources more efficient, R&D needed to insert EUVL in HVM, and extending EUVL from the current 13.5 nm wavelength to 6.x nm for patterning at future nodes.

Keynote talks

In the opening keynote talk, Vadim Banine of ASML reviewed the development of source technologies since 1985 and explained what worked, what didn’t, and why. It was noted that current sources at 10 W need to improve by 10x, but engineering development is expected to achieve this goal. The second keynote was given by Gerry O’Sullivan of University College Dublin, who has studied laser produced plasma (LPP) in the EUV region, the current EUV sources of choice for more than 30 years. O’Sullivan reviewed the physics of LPP-based sources for EUV and mentioned the need for optimum pulse length (~ 40 ns) for driver lasers to achieve the maximum possible conversion efficiency (CE) of 6% from current CO₂-based LPP sources. Sources in commercial tools today have about one-third of this efficiency.

Other presenters in the workshop discussed ways to improve the efficiency of CO₂ laser based LPP sources by tailoring droplets, pre-pulses and main laser pulses. Mark Tillack of UCSD mentioned that the optimum laser excitation wavelength for LPP plasmas may be between 1 and 10 μm, which means other types of lasers may need to be explored. Hakaru Mizoguchi of Gigaphoton presented results for his 20 W average power commercial source, and 3.3% CE results with 20 μm droplets from his R&D lab. For mask metrology sources, several solutions to limit debris and decrease plasma size were presented by Energetiq, NanoUV and NewLambda Technologies.

To continue reading following sections......download 2011 EUVL Workshop Summary

Mask and Resists

EUV Optics

Poster Session

Beyond EUV (BEUV)

Highlights

Summary

Download Proceedings of 2011 EUVL Workshop

Download Abstracts of 2011 EUVL Workshop

Download Agenda of 2011 EUVL Workshop

We will like to thank the Sponsors of 2011 International Workshop on EUVL!



Home 2010 EUV Source Workshop 2010 EUVL Workshop 2009 EUVL Workshop 2008 EUVL Workshop Lithography Education Series Short Course Registration Workshop Registration Sponsorship Information EUVL Technical Reports About us		SECOND CALL FOR PAPERS We are inviting presentations and poster papers for the 2012 International Workshop on EUV Lithography to be held from June 4-8, 2012, in Sheraton Maui Resort, Maui, Hawaii, USA. EUV Lithography related topics covered under this workshop are sources (HVM, Metrology and next generation), exposure tools, mask, optics, resist, contamination, metrology, patterning and cost of ownership. Technology review papers and papers with innovative approaches to address current EUV Lithography related technical challenges are encouraged. The workshop will consist of invited papers/sessions and panel discussions, in addition to regular presentation papers and a poster session. Workshop's focus is on R & D topics and the workshop will provide a forum for discussion of current EUV Lithography technical challenges. Workshop's EUVL short course will provide participants with technical background and education in the area of EUVL. Workshop participants can expect to gain understanding of critical EUVL challenges and brainstorm innovative solutions. On June 4, 2012 EUVL Short Course will be offered. The workshop will start with registration and a reception on June 5, 2012 and will be followed by presentations, panel discussions and poster session on June 6 and 7, 2012. The workshop will conclude with the EUVL Workshop Steering Committee meeting on June 8, 2012, which is also open to workshop attendees. The 2012 International Workshop on EUV Lithography is organized by EUV Litho, Inc. Keynote talk of 2012 EUVL Workshop by Yan Borodovsky, Senior Fellow and Director of Lithography, Intel Corporation Instructions for Submissions and Deadlines Please submit abstracts of less than 200 words. Indicate whether an oral or poster paper is preferred. Please include full name, email address, mailing address for all authors and brief biography and photograph for the presenting author, for inclusion in the abstract book. Submit abstracts via email to abstracts@euvlitho.com. The deadline for abstract submission is March 2, 2012. Abstracts will be evaluated by the workshop's technical steering committee for inclusion in the workshop. Authors will be notified by March 9, 2012, if their abstracts have been accepted for an oral or poster paper. Contact Information For meeting-related issues please contact: meeting.services@euvlitho.com. For technical questions, please contact: vivek.bakshi@euvlitho.com. Please visit www.euvlitho.com for additional information. Download 2012 EUVL Workshop Flyer ______________________________ 2011 Source Workshop Summary The 2011 International Workshop on EUV and Soft X-ray Sources was held Nov. 7-11, in Dublin, Ireland to explore how to advance the performance of current and future EUV sources. The plenary talk of the Workshop was given by Konstantin Koshelev of ISAN, who presented new concepts for EUV sources based on both laser produced plasma (LPP) and discharge produced plasma (DPP). Koshelev proposed using "mist" targets for LPP to increase power and conversion efficiency (CE) and reduce debris. (A few other papers in the Workshop showed the advantages of this approach over current droplet-based targets.) For DPP, he proposed using a tin jet target. Continue reading... download 2011 Source Workshop Summary Download 2011 Source Workshop Proceedings Download 2011 Source Workshop Agenda (Updated) Download 2011 Source Workshop Abstracts EUV and Soft X-Ray Source Workshop is organized by Source Technical Working Group (TWG). Download 2010 Source Workshop Proceedings. ________________________ Researchers at 2011 EUVL Workshop offer ways to further improve EUV Sources at 13.5 nm and extend EUVL to 6.x nm The 2011 International Workshop on EUVL was held from June 13-17, 2011 in Maui, HI. Participants representing universities, national labs, tool suppliers and chip manufacturers discussed ways to address current technical challenges for inserting EUVL into high-volume manufacturing (HVM). Discussions focused on making EUV sources more efficient, R&D needed to insert EUVL in HVM, and extending EUVL from the current 13.5 nm wavelength to 6.x nm for patterning at future nodes. Keynote talks In the opening keynote talk, Vadim Banine of ASML reviewed the development of source technologies since 1985 and explained what worked, what didn’t, and why. It was noted that current sources at 10 W need to improve by 10x, but engineering development is expected to achieve this goal. The second keynote was given by Gerry O’Sullivan of University College Dublin, who has studied laser produced plasma (LPP) in the EUV region, the current EUV sources of choice for more than 30 years. O’Sullivan reviewed the physics of LPP-based sources for EUV and mentioned the need for optimum pulse length (~ 40 ns) for driver lasers to achieve the maximum possible conversion efficiency (CE) of 6% from current CO₂-based LPP sources. Sources in commercial tools today have about one-third of this efficiency. Other presenters in the workshop discussed ways to improve the efficiency of CO₂ laser based LPP sources by tailoring droplets, pre-pulses and main laser pulses. Mark Tillack of UCSD mentioned that the optimum laser excitation wavelength for LPP plasmas may be between 1 and 10 μm, which means other types of lasers may need to be explored. Hakaru Mizoguchi of Gigaphoton presented results for his 20 W average power commercial source, and 3.3% CE results with 20 μm droplets from his R&D lab. For mask metrology sources, several solutions to limit debris and decrease plasma size were presented by Energetiq, NanoUV and NewLambda Technologies. To continue reading following sections......download 2011 EUVL Workshop Summary Mask and Resists EUV Optics Poster Session Beyond EUV (BEUV) Highlights Summary Download Proceedings of 2011 EUVL Workshop Download Abstracts of 2011 EUVL Workshop Download Agenda of 2011 EUVL Workshop We will like to thank the Sponsors of 2011 International Workshop on EUVL! _______________________ 2011 SPIE Advanced Lithography EUVL Conference Review Click the link to Read the Review Article
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